IBA EFD 3G Electron Dosimetry Diode Detector

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IBA EFD^3G Electron Dosimetry Diode Detector.

The IBA Dosimetry Diode Detectors are an excellent choice in relative field analysis as well as output factor measurements. They are based on the 3rd generation of pSi semiconductors.  The high doped p-type silicon detector chips, specifically designed for radiation therapy applications, have since their introduction in 1992 been the natural choice for measurements where high spatial resolution is required.  The accuracy and lifetime of the diode detectors is unsurpassed in the field of radiation therapy today.

• Waterproof

• Has a proven dose rate and energy independence

• Have a high uniform spatial resolution in the beam plane and precise definition of the measurement depth (accurately shaped penumbras in the whole beam plane using the same detector orientation)

• Independent of bias, pressure and moisture, very robust, always reliable, no "warm-up" time

• High durability: 3 year warranty - low lifetime costs

The EFD^3G Electron Diode provides direct electron depth dose, no need for ionization to dose conversion.

Applications

The IBA Dosimetry Diode Detectors are designed for depth dose and profile measurements in water and in air and for output factor measurements in small photon beams.

Specifications
Effective Measurement Point:  < 0.9 mm
Chip Size (Side / Thickness):  2.5 / 0.5 mm
Geometric Form of Active Area:  Circled
Diameter of Active Area:  2 mm
Thickness of Active Volume:  0.06 m